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Engineering & Electronics Research
Non-uniform illuminated semiconductor switches-a way to ultrafast
optoelectronics
Brucknor, V.; Glasbeek, M.; Vickers, A.; Zhang, H.
Inst. Angewandte Opt., Friedrich-Schiller-Univ., Jena, Germany
Experimental Technique of Physics
vol.40, no.2
259-70
Publisher: Heldermann Verlag
Publication Date: 1994
Language: English
Abstract: Uniform and non-uniform 60 fs laser illumination of a photo-sensitive GaAs
photodetector is investigated with the purpose of producing large amplitude fast (or=70 ps) electric
pulses. In particular,
the partly covered gap technique is described. Furthermore, in GaAs the
Dember effect was found. (9 Refs)
© 1996, FIZ Karlsruhe
- Subjects:
- Dember effect
- gallium arsenide
- high-speed optical
techniques
- III-V semiconductors
- photoconducting
switches
- photodetectors
- semiconductor switch
- ultrafast optoelectronics
- GaAs
photodetector
- electric pulse
- partly covered gap
- Dember effect
- nonuniform laser
illumination
- GaAs
- Photoelectric devices
- Photodetectors
- Experimental
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© 1997 Institution of Electrical Engineers. All rights
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